Title:
METHOD FOR DEPOSITING METAL NITRIDE-BASED LAYER ON TRANSPARENT SUBSTRATE
Document Type and Number:
Japanese Patent JP2006206435
Kind Code:
A
Abstract:
To provide a vapor phase growth method of a metal nitride layer having a good yield, ease of use on an industrial scale, and convenience of colorimetry of a resulting layer, in particular colorimetry of transmitted light.
A metal nitride or oxynitride layer, particularly a titanium nitride or titanium oxynitride layer, is pyrolytically deposited onto a transparent substrate, particularly a glass substrate, which is heated to a high temperature, by simultaneously bringing at least one metal precursor and at least one nitrogen precursor in a form of an amine into contact with said substrate.
Inventors:
BOIRE PHILIPPE
TESTULAT BERTRAND
TESTULAT BERTRAND
Application Number:
JP2006060153A
Publication Date:
August 10, 2006
Filing Date:
March 06, 2006
Export Citation:
Assignee:
SAINT GOBAIN
International Classes:
C03C17/245; C03C17/22; C03C17/34; C03C27/06; C23C16/30; C23C16/34; E06B9/24
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Nagasaka Tomoyasu
Takashi Ishida
Tetsuji Koga
Nagasaka Tomoyasu