To provide a method and device for cleaning an electrostatic attraction electrode by which reaction products on an attraction surface of the electrostatic attraction electrode can be removed without damaging an insulating film.

An etching chamber 12 constituted by a chamber 7, a microwave introducing window 40 for introducing a microwave 4 is provided above an electrostatic attraction electrode 36. A process gas introducing hole 41 for introducing a process gas 10 into the etching chamber 12 above the electrostatic attraction electrode 36 is provided in the chamber 7. Solenoid coils 35a, 35b and 35c are provided separately in three stages surrounding the etching chamber 12. Reaction products 22 are removed so that the deposition amount distribution of the reaction products 22 generated during plasma etching treatment and attached to the electrostatic attraction electrode 36 offsets the removal speed distribution when the reaction products 22 are removed by plasma of a process gas for cleaning.