METHOD AND DEVICE FOR DETECTING GAS LEAK FROM HEAT-TREATMENT FURNACE FOR SEMICONDUCTOR

Title:

METHOD AND DEVICE FOR DETECTING GAS LEAK FROM HEAT-TREATMENT FURNACE FOR SEMICONDUCTOR

Document Type and Number:

Japanese Patent JPH0634479

Kind Code:

A

Abstract:

PURPOSE: To quickly and surely detect gas leak from the processing tube of a heat-treatment furnace for semiconductors with a simple constitution.

CONSTITUTION: A gas pressure detector 17 detects the pressure of an exhaust gas from a processing tuber 11 and sends gas pressure information to a valve controller 18. The controller 18 adjusts the flow rate of a valve 19 by sending a control signal based on the gas pressure information. An arithmetic device 20 calculates a reference gas discharging amount and its deviation based on the control signal and, when the deviation is larger than a reference deviation, sends abnormality signals to an abnormality alarm 21, gas supplying device 15, and gas force-discharging device 22. The alarm 21 alarms the occurrence of abnormality and the device 15 stops the supply of a hydrogen gas, and then, the device 22 discharges the hydrogen gas from the tube 11.

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Inventors:

SAKAI YUICHI
KATO ETSUSHI
SATO TAKAHIRO

Application Number:

JP18912392A

Publication Date:

February 08, 1994

Filing Date:

July 16, 1992

Export Citation:

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Assignee:

TOSHIBA CERAMICS CO

International Classes:

G01M3/26; G01M3/28; G06F19/00; H01L21/22; H01L21/31; (IPC1-7): G01M3/26; G06F15/46; H01L21/22; H01L21/31

Attorney, Agent or Firm:

Izumi Katsufumi

Next Patent: METHOD FOR INSPECTING DEEP-DRAWN GOODS