Title:
METHOD AND DEVICE FOR EXTRACTING NOISE PARAMETER
Document Type and Number:
Japanese Patent JP3398727
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To shorten a parameter extracting time in extraction technique for a parameter for expressing bias base current dependency as to a 1/f noise, as a large number of measuring data and a long time for extraction are required in a conventional method.
SOLUTION: In this method for extracting a noise parameter expressing bias base current dependency of a 1/f noise of a silicon high-porous transirtor, the noise parameter is extracted based on the dependency with respect to a base current of a noise voltage in an optional frequency in a frequency area where a frequency characteristic of the noise voltage is brought into 1/f, as to a circuit for grounding an emitter electrode of the high-porous transistor, impressing the first bias voltage to a collector electrode thereof through the first variable resistance, and impressing the second bias voltage to a base electrode through the second variable resistance to measure a noise-voltage- root-mean square generated in both ends of the first variable resistance.
Inventors:
Hiroshi Morikawa
Application Number:
JP31563199A
Publication Date:
April 21, 2003
Filing Date:
November 05, 1999
Export Citation:
Assignee:
nec compound device Co., Ltd.
International Classes:
G01R31/26; G01R29/26; (IPC1-7): G01R31/26; G01R29/26
Domestic Patent References:
| JP59206782A | ||||
| JP5636061A |
Attorney, Agent or Firm:
Johei Yamashita