METHOD AND DEVICE FOR EXTRACTING STATISTICAL MODEL PARAMETER

Title:

METHOD AND DEVICE FOR EXTRACTING STATISTICAL MODEL PARAMETER

Document Type and Number:

Japanese Patent JP2001291778

Kind Code:

A

Abstract:

To provide a method for extracting a statistical model parameter for quickly and precisely extracting the model parameter of a BSIM 3 from the measured data of the saturation currents and threshold of an MOS.

In a method for extracting the value of the model parameter of an MOS device to be used at the time of operating circuit simulation, a model parameter extracted from the Vds-Ids, Vgs-Ids characteristics of one specific device is used as a base, and a statistical model parameter related with a process indicating the oxide film thickness of the MOS, the doze quantity of a channel, short channel effect reduction infra doze quantity, channel length, and channel width is extracted from the measured data of only the saturation currents and threshold of the other MOS.

Inventors:

MIYAMA MIKAKO
KANBARA SHIRO
NAKURA KOICHI

Application Number:

JP2000106695A

Publication Date:

October 19, 2001

Filing Date:

April 04, 2000

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

G06F17/50; H01L21/336; H01L21/8234; H01L27/088; H01L29/00; H01L29/78; (IPC1-7): H01L21/8234; G06F17/50; H01L21/336; H01L27/088; H01L29/00; H01L29/78

Attorney, Agent or Firm:

Sakuta Yasuo

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