METHOD AND DEVICE FOR FORM DEPOSITION FILM

Japanese Patent JP3487580

B2

PROBLEM TO BE SOLVED: To continuously form a deposition film having a composition distribu tion in the film-thickness direction on a mobile substrate by introducing a plural ity of source gases from a discharge space forming a region, where a in-film composition ratio of group III, IV, or V elements contained in such a material gas as of small dissociation energy is maximum in the film-thickness direction.
SOLUTION: Related to the deposition film forming method, a long length base body 5 is moved continuously in a discharge space 7 and a deposition film, where a composition changes in the film-thickness direction is formed continuously on the lengthy mobile base body 5 by a plasma CVD method. At the introduction of a plurality of source gases containing each kind of group III, IV, or V elements from the moving direction position of the base body 5 in the discharge space 7, a plurality of source gases is introduced from a position of the discharge space 7 for forming a region where the in-film composition ratio of group III, IV, or V elements contained in a source gas, among a plurality of source gases, whose dissociation energy is small is maximum in the film-thickness direction.

JP6146160	A method for film deposition, a storage, and a film deposition system
WO/2010/029720	NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME
JPH08977	[Title of Invention] Plasma CVD method and apparatus

Shotaro Okabe
Yasushi Fujioka
Akira Sakai
Yuzo Koda
Tadashi Sawayama
Takahiro Yajima
Masahiro Kanai

JP17128699A

January 19, 2004

June 17, 1999

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Canon Inc

H01L21/205; C23C16/50; C23C16/517; C23C16/52; G03G5/08; (IPC1-7): H01L21/205; C23C16/517; C23C16/52; G03G5/08

JP5121338A
JP5247655A
JP4198481A
JP5190461A

Tatsuya Nagao

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