To improve the reproducibility of a copper film by eliminating a process exposing a diffusion barrier film to the outside air before the forming of a copper film, by improving various kinds of properties of the films and characteristics at the interface of the films and by improving a surface management.
In a device for forming a copper wiring film, after a MOCVD chamber 12 forms an underlying film for a diffusion barrier and a CVD chamber 14 forming a copper film for a wiring have a vacuum connected structure, an underlying film is formed in the MOCVD chamber 12, and then with the underlying film kept in a vacuum and not exposed to the outside air, a copper film is formed in the CVD chamber 14. This device has control units 31, 32 for keeping the product of the pressure of the atmosphere, to which the surface of the underlying film is exposed and a time constant from the forming of the underlying film to the forming of the copper film, such that gas to be adsorbed by the surface of the underlying film becomes constant.
SEKIGUCHI ATSUSHI
OKADA OSAMU
