Title:
METHOD AND DEVICE FOR HEATING WAFER
Document Type and Number:
Japanese Patent JP3267371
Kind Code:
B2
Abstract:
PURPOSE: To provide a method of heating a wafer, which can perform a good heating free from the generation of a slip without depending the generation of the slip on the uniformity of the heating density of a heater and without depending also on the contact area of the wafer with a holder, and a device.
CONSTITUTION: A wafer heating device is manufactured into such a structure that temperature measuring positions (A), (B) and (C) of radiation thermometers 7A, 7B and 7C, which are used as a temperature measuring means are set at a plurality of different positions, which are positioned on the outer periphery part of a wafer 1 and are positioned on a part located 70% or higher of the radius of the wafer 1 apart from the center of the wafer 1, and at the time, the wafer is heated in such a way that a temperature difference between a plurality of the temperature measuring points (A) and (B) or the (C) is 5°C or lower in a heat-up process and at the time when a high temperature is kept.
Inventors:
Hideki Arai
Satoshi Fukuyama
Yasuaki Honda
Satoshi Fukuyama
Yasuaki Honda
Application Number:
JP4416393A
Publication Date:
March 18, 2002
Filing Date:
March 04, 1993
Export Citation:
Assignee:
Toshiba Machine Co., Ltd.
International Classes:
H01L21/205; H01L21/22; (IPC1-7): H01L21/205; H01L21/22
Domestic Patent References:
| JP4239120A | ||||
| JP2262331A |
Attorney, Agent or Firm:
Takehiko Suzue