To provide a device for manufacturing an electret capacitor capable of preventing discharge of charge of an electret in a manufacturing process.
This device 100 for manufacturing an electret capacitor includes an ionization radiation irradiation device 101 for irradiating a semiconductor ECM 110 formed by a semiconductor manufacturing technology with an ionization radiation, and a D.C. power source 102, wherein the semiconductor ECM 110 includes a vibration film 112, a back plate 113, and a silicon oxide film 115 as a dielectric formed on the back plate 113, and the ionization radiation irradiation device 101 has a structure for manufacturing an electret by irradiating the semiconductor with the ionization radiation in a state where a D.C. voltage is applied between the vibration film 112 and the back plate 113, and implanting negative ions out of positive and negative ions generated by the ionization radiation having passed through the vibration film 112 into the silicon oxide film 115.
HAGIWARA HIROSHI
TAJIMA TOSHIFUMI
KIDOKORO KENICHI
YASUNO ISANAGA
KODAMA HIDEKAZU
IGUCHI YOSHINORI
RION CO
KOBAYASHI RIGAKU KENKYUSHO
NHK ENGINEERING SERVICES INC
| JP2008260488A | 2008-10-30 | |||
| JP2001156892A | 2001-06-08 | |||
| JPH11117172A | 1999-04-27 | |||
| JPH036500A | 1991-01-11 | |||
| JPH08190992A | 1996-07-23 | |||
| JPH06104977A | 1994-04-15 | |||
| JPS55106369A | 1980-08-15 | |||
| JP2008260488A | 2008-10-30 | |||
| JP2001156892A | 2001-06-08 | |||
| JPH11117172A | 1999-04-27 | |||
| JPH036500A | 1991-01-11 | |||
| JPH08190992A | 1996-07-23 |