Title:
METHOD OF DRY ETCHING
Document Type and Number:
Japanese Patent JP3418045
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve accuracy in dimensions in an etching step, along with less damages and high selectivity of an etching material to a base film, by obtaining a ratio of luminous intensity of a primary wavelength and a secondary wavelength from given elements in a mixed gas, and control a plasma on the basis of the ratio of the luminous intensity.
SOLUTION: A beam of light from a plasma 7 in a vacuum chamber 4 is condensed by an optical lens, and a spectroscope 21 for the light of an optical system 20 is provided. An area sensor 22 for detecting a beam separated in wavelengths by the spectroscope 21 is provided to measure the luminous intensity of beams with two wavelengths. A ratio of luminous intensity of plasma beams from the vacuum chamber 4 is calculated on the basis of the luminous intensity of the area sensor 22. The state of plasma is optimized by a control signal that is fed in a control circuit 23 on the basis of the ratio of luminous intensity. Then, a selectivity ratio of silicon-based material to a base oxide film can be improved, and at the same time, accuracy in dimensions can be improved in the etching step.
Inventors:
Satoshi Morishita
Koichiro Adachi
Kazuo Sugimoto
Koichiro Adachi
Kazuo Sugimoto
Application Number:
JP34306795A
Publication Date:
June 16, 2003
Filing Date:
December 28, 1995
Export Citation:
Assignee:
Sharp Corporation
International Classes:
C23F4/00; H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065; C23F4/00
Domestic Patent References:
| JP60120525A | ||||
| JP1179326A | ||||
| JP63288024A | ||||
| JP8298257A |
Attorney, Agent or Firm:
Takaya Koike