Title:
METHOD AND EQUIPMENT FOR FORMING FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3712356
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method and equipment for forming a film with which a silicon insulating film containing fluorine with stable film quality can be formed, and to provide a method of manufacturing a semiconductor device.
SOLUTION: This film forming equipment 10 includes parallel plate electrodes 16, 22 provided in a reaction chamber 12, gas supply sources 20, 30 for introducing process gases containing SiH4, SiF4, and an oxygen source substance into the reaction chamber 12, valves 36, 38, 40, a gas mixing chamber 28 and a power source 44 for supplying RF power to generate plasma of the process gases. In this film forming device 10, the power source 44 can supply RF power of 1,000 W or higher to the parallel plate electrodes 16, 22. In this equipment 10, plasma of the process gases containing SiH4, SiF4 and N2O is generated and a silicon oxide film containing fluorine is deposited on a wafer 14.
Inventors:
Yoichi Suzuki
Tsutomu Shimayama
Tsutomu Shimayama
Application Number:
JP2000322849A
Publication Date:
November 02, 2005
Filing Date:
October 23, 2000
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
C23C16/40; C23C16/509; H01L21/31; H01L21/316; H01L21/3205; H01L21/768; H01L23/522; (IPC1-7): H01L21/316; C23C16/40; H01L21/31; H01L21/3205; H01L21/768
Domestic Patent References:
| JP11008235A | ||||
| JP8213388A | ||||
| JP11283976A | ||||
| JP217639A | ||||
| JP200257157A |
Foreign References:
| WO1997030188A1 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yuichi Yamada
Ichira Kondo
Yuichi Yamada
Ichira Kondo