METHOD FOR ETCHING FIRE-RESISTANT METALLIC LAYER IN PARALLEL BOARD REACTOR DURING MANUFACTURE OF DEVICE ON SEMICONDUCTOR SUBSTRATE

Japanese Patent JP3213820

B2

PURPOSE: To uniformly execute etching back and to fill contact bias by etching a semiconductor substrate, having a metal layer which is difficult to be worked in mixture containing NF3 and inactive gas.
CONSTITUTION: In a semiconductor substrate, constituted of a lower layer 31 and a metallic layer 32 which is difficult to be worked, a tungsten layer for example, the most part of the tungsten layer 32 is etched uniformly by etching agents NF3 and Ar. Then, the remaining tungsten layer 32 and the most part of a titanium nitride layer 31 which are the lower layer are etched, and tungsten is left to be filled in a contact hole 25. The remaining parts of the tungsten layer 32 and the titanium nitride layer 31 are removed. An etching gas used in the process selectively etches Ti, TiW or TiN on W. Thus, the TiN layer 31 at a lower side is etched faster than tungsten which forms a contact filling material, and the contact filling material is made more uniform.

JP2599289	PROBLEM TO BE SOLVED: To grow a tunnel oxide on a substrate.
JPS6489470	MANUFACTURE OF SEMICONDUCTOR DEVICE
WO/2002/007201	METHOD FOR ETCHING TRENCHES FOR THE FABRICATION OF SEMICONDUCTOR DEVICES

Ricky El Davis
Sohail You Ahmed
Slider Balakrishnan

JP12298392A

October 02, 2001

April 17, 1992

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INTEL CORPORATION

H01L21/28; H01L21/302; H01L21/3065; H01L21/3205; H01L21/321; H01L21/3213; H01L21/768; (IPC1-7): H01L21/3065; H01L21/3205

JP279428A
JP3222417A
JP2503614A

Masaki Yamakawa

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