Title:
METHOD OF ETCHING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPH01194329
Kind Code:
A
Abstract:
PURPOSE: To suppress the convection of etching solution and avoid traces of liquid shaking by a method wherein, after a semiconductor substrate is covered with a film of concd. sulfuric acid, etching is performed with mixed solution of sulfuric acid-hydrogen peroxide solution-water.
CONSTITUTION: A GaAs substrate 1 is dipped into concd. sulfuric acid to cover its surface with a film 2 of concd. sulfuric acid. Then the substrate 1 is dipped into etching solution of H2SO4-H2O2 (30wt.%)-H2O prepared with the composition ratio of 4:1:1 and etched while the solution is stirred sufficiently. Since the reaction is progressed gradually as the concd. sulfuric acid film is getting thin ner, the convection of etching solution can be suppressed.
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Inventors:
SHIMURA AKIO
Application Number:
JP1942888A
Publication Date:
August 04, 1989
Filing Date:
January 28, 1988
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L21/308; (IPC1-7): H01L21/308
Attorney, Agent or Firm:
Uchihara Shin