Title:
METHOD FOR EVALUATING QUALITY OF COMPOUND SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JP2002026095
Kind Code:
A
Abstract:
To provide a nondestructive evaluation method of a compound semiconductor wafer requiring no slicing of a sample other than a product sample in which dislocation density of a high level wafer having a mean dislocation density of 100/cm2 or less can be evaluated correctly without requiring a troublesome etching operation.
A compound semiconductor wafer 1 to be evaluated is irradiated with laser light and the parts A-F where the peak intensity of photoluminescent light radiated from the wafer 1 is high are regarded as the parts of high dislocation density.
Inventors:
SASAHEN HIROSHI
MIZUNIWA SEIJI
ITANI MASAYA
MIZUNIWA SEIJI
ITANI MASAYA
Application Number:
JP2000211359A
Publication Date:
January 25, 2002
Filing Date:
July 12, 2000
Export Citation:
Assignee:
HITACHI CABLE
International Classes:
G01N21/88; H01L21/66; (IPC1-7): H01L21/66; G01N21/88
Attorney, Agent or Firm:
Tadao Hirata