METHOD FOR EXECUTING DOUBLE-EXPOSURE LITHOGRAPHY, PROGRAM PRODUCT AND DEVICE

Title:

METHOD FOR EXECUTING DOUBLE-EXPOSURE LITHOGRAPHY, PROGRAM PRODUCT AND DEVICE

Document Type and Number:

Japanese Patent JP2006293381

Kind Code:

A

Abstract:

To provide a method for forming a complementary mask, based on a target pattern, having a feature mapped on a substrate, which is used in a multiple-exposure lithography mapping process.

The method comprises a step for defining a first H mask, corresponding to the target pattern, a step for defining a first V mask, corresponding to the target pattern, a step for identifying horizontal critical features in the H mask, which is narrower than the predetermined critical width, a step for identifying a vertical critical feature in the V mask, which is narrower than the predetermined critical width, a step for assigning a first phase shift and a first transmissibility to the horizontal critical feature formed in the H mask, and a step for assigning a second phase shift and a second transmissibility to the vertical critical feature formed in the V mask.

Inventors:

CHEN JANG FUNG
HSU DUAN-FU STEPHEN
VAN DEN BROEKE DOUGLAS

Application Number:

JP2006134487A

Publication Date:

October 26, 2006

Filing Date:

April 12, 2006

Export Citation:

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Assignee:

ASML MASKTOOLS BV

International Classes:

G03F1/08; G03F7/20; H01L21/027

Domestic Patent References:

JP2004177968A	2004-06-24
JPH04273428A	1992-09-29
JP2005141242A	2005-06-02
JPH07273013A	1995-10-20
JP2004133427A	2004-04-30
JP2003178966A	2003-06-27

Foreign References:

US20040010770A1	2004-01-15
WO2000025181A1	2000-05-04

Attorney, Agent or Firm:

Hideto Asamura
Hajime Asamura
Toru Mori
Yutaka Yoshida

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