Title:
METHOD OF FILLING FEATURE WITH HIGH ASPECT RATIO USING NON-FLUORINE CONTAINING TUNGSTEN
Document Type and Number:
Japanese Patent JP2015232177
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method and an apparatus of vapor depositing and etching tungsten using a tungsten chloride reaction substance.SOLUTION: A method of completely filling a feature 313 of a substrate 303 with a tungsten layer 363 by repeating steps of 321-341 and steps of 341-351. In the steps 321-341, the substrate 303 is exposed to a tungsten chloride (WCl) precursor and a reduction agent under a first set condition and a first tungsten layer 343 is vapor deposited in the feature 313 of the substrate 303 by chemical vapor deposition (CVD). In the steps 341-351, the substrate is exposed to the WClprecursor and the reduction agent under a second set condition and the first tungsten layer 343 is etched.
Inventors:
HANNA BAMNOLKER
RAASHINA HUMAYUN
MICHAL DANEK
JOSHUA COLLINS
RAASHINA HUMAYUN
MICHAL DANEK
JOSHUA COLLINS
Application Number:
JP2015109333A
Publication Date:
December 24, 2015
Filing Date:
May 29, 2015
Export Citation:
Assignee:
LAM RES CORP
International Classes:
C23C16/14; C23C16/455; H01L21/28; H01L21/285; H01L21/3205; H01L21/3213; H01L21/768; H01L23/522; H01L23/532
Domestic Patent References:
| JPS61224313A | 1986-10-06 | |||
| JP2015190020A | 2015-11-02 |
Attorney, Agent or Firm:
Meisei International Patent Office