Title:
FILM FORMATION METHOD
Document Type and Number:
Japanese Patent JP2017082341
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a film formation apparatus capable of forming a vapor-deposited film to cover a vapor deposition target object having a three-dimensional curved surface, and to provide a film formation method for a vapor-deposited film to cover a three-dimensional curved surface.SOLUTION: A film formation apparatus is equipped with: a vapor deposition source having a directivity in vapor deposition direction; a vapor deposition source moving mechanism which moves the vapor deposition source; a vapor deposition target object holding mechanism which holds a vapor deposition target object having a three-dimensional curved surface; a vapor deposition direction changing mechanism which changes the vapor deposition direction; and a control part which controls the vapor deposition source moving mechanism and the vapor deposition direction changing mechanism.SELECTED DRAWING: Figure 1
Inventors:
YAMAZAKI SHUNPEI
EGUCHI SHINGO
EGUCHI SHINGO
Application Number:
JP2017011107A
Publication Date:
May 18, 2017
Filing Date:
January 25, 2017
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
C23C14/24; H01L51/50; H05B33/10
Domestic Patent References:
| JP2008108611A | 2008-05-08 | |||
| JPH05339712A | 1993-12-21 | |||
| JP2008031501A | 2008-02-14 | |||
| JP2008108611A | 2008-05-08 | |||
| JPH05339712A | 1993-12-21 | |||
| JP2008031501A | 2008-02-14 |