METHOD FOR FORMATION OF DIELECTRIC FILM, NOVEL PRECURSOR, AND THEIR USE IN SEMICONDUCTOR PRODUCTION

Title:

METHOD FOR FORMATION OF DIELECTRIC FILM, NOVEL PRECURSOR, AND THEIR USE IN SEMICONDUCTOR PRODUCTION

Document Type and Number:

Japanese Patent JP2014039045

Kind Code:

A

Abstract:

To provide a method for depositing a film of metal-containing dielectric expressed by the formula (I):(Zr_1-aM²_a)O_bN_c (where "a" and "b" satisfy 0≤a<1 and 0<b≤3 and preferably 1.5≤b≤2.5 and 0≤c≤1; and M² represents a metal atom.).

A method for depositing a metal-containing dielectric film comprises: the step a) of loading a substrate into a reaction chamber; the step b) of evaporating a Zr metal-containing precursor selected from a group consisting of Zr(MeCp)(NMe₂)₃, Zr(EtCp)(NMe₂)₃, ZrCp(NMe₂)₃, Zr(MeCp)(NEtMe)₃, Zr(EtCp)(NEtMe)₃, ZrCp(NEtMe)₃, Zr(MeCp)(NEt₂)₃, Zr(EtCp)(NEt₂)₃, ZrCp(NEt₂)₃, Zr(iPr₂Cp)(NMe₂)₃, and Zr(tBu₂Cp)(NMe₂)₃; and the step of depositing, on the substrate, a metal-containing dielectric film including a compound of the formula (I) by use of the first gas-phase-metal source and the appropriate second gas-phase-metal source.

Inventors:

BLASCO NICOLAS
DUSSARRAT CHRISTIAN
PINCHART AUDREY
LACHAUD CHRISTOPHE

Application Number:

JP2013186819A

Publication Date:

February 27, 2014

Filing Date:

September 09, 2013

Export Citation:

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Assignee:

AIR LIQUIDE

International Classes:

H01L21/316; C23C16/40; C23C16/42; H01L21/318

Domestic Patent References:

JP2002069641A	2002-03-08
JP2005171291A	2005-06-30
JP2005187356A	2005-07-14
JP2002060944A	2002-02-28
JP2004529495A	2004-09-24
JP2007537605A	2007-12-20
JP2004296887A	2004-10-21
JP2004214304A	2004-07-29
JPH08269121A	1996-10-15
JPH10503242A	1998-03-24
JP2001102326A	2001-04-13
JP2004349710A	2004-12-09
JP2001355070A	2001-12-25

Foreign References:

WO2007066546A1

2007-06-14

Other References:

JPN7013001614; Ｊ．　Ｎｉｉｎｉｓｔｏ，　Ｍ．　Ｐｕｔｋｏｎｅｎ，　Ｌ．　Ｎｉｉｎｉｓｔｏ，　Ｋ．　Ｋｕｋｌｉ，　Ｍ．　Ｒｉｔａｌａ，　ａｎｄ　Ｍ．　Ｌｅｓｋｅｌａ: 'Ｓｔｒｕｃｔｕｒａｌ　ａｎｄ　ｄｉｅｌｅｃｔｒｉｃ　ｐｒｏｐｅｒｔｉｅｓ　ｏｆ　ｔｈｉｎ　ＺｒＯ２　ｆｉｌｍｓ　ｏｎ　ｓｉｌｉｃｏｎ　ｇｒｏｗｎ　ｂｙ　ａｔｏｍｉｃ　ｌａｙｅｒ　ｄｅｐｏｓｉｔｉｏｎ' Ｊ．　Ａｐｐｌ．　Ｐｈｙｓ．９５, 20040101, ８４-９１
JPN7012000475; Ｇ．Ｃｈａｎｄｒａ　ａｎｄ　Ｍ．Ｆ．Ｌａｐｐｅｒｔ: 'Ａｍｉｄｏ-ｄｅｒｉｖａｔｉｖｅｓ　ｏｆ　Ｍｅｔａｌｓ　ａｎｄ　Ｍｅｔａｌｌｏｉｄｓ．　Ｐａｒｔ　ＶＩ．　Ｒｅａｃｔｉｏｎｓ　ｏｆ　Ｔｉｔａｎｉｕｍ（ＩＶ），　Ｚｉｒｃｏｎｉｕｍ（ＩＶ），　ａｎｄ　Ｈ' Ｊ．　Ｃｈｅｍ．　Ｓｏｃ．　（Ａ） , 1968, １９４０-１９４５
JPN6012006725; Ｈｏｒｓｔ　Ｓｃｈｎｅｉｄｅｒ，　Ｇｅｒｄ　Ｔ　Ｐｕｃｈｔａ，　Ｆｒａｎｚ　Ａ．Ｒ　Ｋａｕｌ，　Ｇａｂｒｉｅｌｅ　Ｒａｕｄａｓｃｈｌ-Ｓｉｅｂｅｒ，　Ｆｒｅｄｅｒｉｃ　Ｌｅｆｅｂｖｒｅ，　Ｇｕｉｌｌａ: 'Ｉｍｍｏｂｉｌｉｚａｔｉｏｎ　ｏｆ　eta５-ｃｙｃｌｏｐｅｎｔａｄｉｅｎｙｌｔｒｉｓ（ｄｉｍｅｔｈｙｌａｍｉｄｏ）ｚｉｒｃｏｎｉｕｍ　ｐｏｌｙｍｅｒｉｚａｔｉｏｎ　ｃａｔａｌｙｓｔｓ　ｏｎ　ａ　ｃｈｌ' Ｊｏｕｒｎａｌ　ｏｆ　Ｍｏｌｅｃｕｌａｒ　Ｃａｔａｌｙｓｉｓ　Ａ：　ＣｈｅｍｉｃａｌＶｏｌｕｍｅ　１７&#x

Attorney, Agent or Firm:

Kurata Masatoshi
Yoshihiro Fukuhara
Makoto Nakamura
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Katsu Sunagawa
Morisezo Iseki
Takao Ako
Tadashi Inoue
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi

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