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Title:
METHOD FOR FORMING LIQUID CRYSTAL ELECTROOPTICAL DEVICE
Document Type and Number:
Japanese Patent JPS6350817
Kind Code:
A
Abstract:

PURPOSE: To control a space between two orientation films to a prescribed thickness with scattering of ±0.5μm by controlling a height of the orientated film to the prescribed height by remaining selectively an epoxy adhesives, and by forming a spacer and the peripheral sealing agent with the epoxy adhesives which is the same material to that of the spacer and sealing agent.

CONSTITUTION: The titled device is formed by coating with the org. adhesives 8 such as the epoxy adhesives having photosensitive property on the one surface of the substrate 1 which forms an electrode 2, or forms an orientated film 3, thereon, in the prescribed height by means of a coating method followed by selectively exposing it with a mask to expose the photosensitive resin. The spacer 9 and the peripheral sealing part having a linear type, a block type or an optional adductor type are selectively formed by an etching step, after selectively exposing only a range which is not masked. Thus, even in case that the resin of acting as the spacer and the peripheral sealing agent of a cell has the uneveness in height, the coating film of the prescribed thickness with scattering of less than ±0.5μm is obtd. by selectively remaining the coating film which is the same material to that of the spacer and sealing agent.


Inventors:
SATO MASAHIKO
KONUMA TOSHIMITSU
MASE AKIRA
TAKAYAMA TORU
OTAKA MASAICHI
YAMAGUCHI TOSHIJI
WATANABE TOSHIO
AOYANAGI OSAMU
TABATA KAORU
ISHIGAKI CHIZURU
SAKAYORI HIROYUKI
KOBAYASHI IPPEI
OSABE AKIO
YAMAZAKI SHUNPEI
Application Number:
JP19642486A
Publication Date:
March 03, 1988
Filing Date:
August 20, 1986
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
G02F1/13; G02F1/1339; (IPC1-7): G02F1/13; G02F1/133
Domestic Patent References:
JPS61184518A1986-08-18
JPS617822A1986-01-14