Title:
METHOD FOR FORMING METALLIC PATTERN AND MANUFACTURE OF SEMICONDUCTOR HAVING METALLIC WIRING PATTERN
Document Type and Number:
Japanese Patent JP3430632
Kind Code:
B2
Abstract:
PURPOSE: To provide a metallic pattern forming method and a method for manufacturing a semiconductor having the metallic wiring pattern with a small effect exerted by topolography at the surface of a substrate in simple and easy processes, where an expensive material always need not be used, in forming the metallic pattern on a fine semiconductor device.
CONSTITUTION: A wiring pattern forming surface of a semiconductor substrate is treated with a hydrophobic treating agent, which can be turned into hydrophilicity by exposure, to be turned into hydrophobicity I. The wiring pattern forming surface after treatment is exposed II in a pattern form, and then, the exposed portion is turned into hydrophilicity III. Subsequently, a hydrophilic or hydrophobic solution composed of a metallic compound is applied IV, IV' to the wiring pattern forming surface, thus depositing the metallic compound. The resultant metallic compound is subjected to metalizing treatments V, V', thus forming metal into a pattern shape.
Inventors:
Yoichi To
Application Number:
JP11812094A
Publication Date:
July 28, 2003
Filing Date:
May 31, 1994
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/3205; H01B13/00; H01L21/288; (IPC1-7): H01B13/00; H01L21/3205
Domestic Patent References:
| JP324550A |
Attorney, Agent or Firm:
Toru Takatsuki
Previous Patent: AUTOMATIC WINDER
Next Patent: COOLING STRUCTURE OF V-BELT TYPE POWER TRANSMISSION DEVICE
Next Patent: COOLING STRUCTURE OF V-BELT TYPE POWER TRANSMISSION DEVICE