METHOD OF FORMING RUGGED SURFACE AND METHOD OF MANUFACTURING GALLIUM NITRIDE LIGHT-EMITTING DIODE DEVICE USING THE SAME

Title:

METHOD OF FORMING RUGGED SURFACE AND METHOD OF MANUFACTURING GALLIUM NITRIDE LIGHT-EMITTING DIODE DEVICE USING THE SAME

Document Type and Number:

Japanese Patent JP2008047860

Kind Code:

A

Abstract:

To provide a method of forming a rugged surface and a method of manufacturing a gallium nitride light-emitting diode device using the same.

A method of forming a rugged surface comprises steps of: preparing a GaN substrate 110; forming a mask 200 for defining a region on one surface of the GaN substrate in which a concavo-convex surface 150 is formed; and, when a part of the surface of the GaN substrate is wet-etched by using the mask as an etching mask, etching the edge termination of side surface of GaN substrate etched until each top end of a rugged shape and the adjacent top end of a next rugged shape will be met with each other on the surface when viewed from either side surface.

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Inventors:

CHOI PUN JAE
KOIKE MASAYOSHI
LEE JONG HO

Application Number:

JP2007122347A

Publication Date:

February 28, 2008

Filing Date:

May 07, 2007

Export Citation:

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Assignee:

SAMSUNG ELECTRO MECH

International Classes:

H01L33/06; H01L33/10; H01L33/22; H01L33/32

Domestic Patent References:

JP2005354020A	2005-12-22
JP2006179511A	2006-07-06
JP2005191530A	2005-07-14

Attorney, Agent or Firm:

Jun Takamura

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