Title:
METHOD FOR FORMING SILICIDE CONTACT
Document Type and Number:
Japanese Patent JP2007103884
Kind Code:
A
Abstract:
To provide a method for forming an at least partially silicide contact avoiding a chemical mechanical polishing step.
A hard mask is deposited on a contact, a sacrificial material coating is formed on the upper surface of the hard mask, and the sacrificial material coating is etched back until the upper surface of the contact is exposed. The contact is opened and the sacrificial material is removed. The silicidation of the contact is executed.
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Inventors:
ABSIL PHILIPPE
KITTL JORGE
KITTL JORGE
Application Number:
JP2005295670A
Publication Date:
April 19, 2007
Filing Date:
October 07, 2005
Export Citation:
Assignee:
IMEC INTER UNI MICRO ELECTR
TEXAS INSTRUMENTS INC
TEXAS INSTRUMENTS INC
International Classes:
H01L21/28; H01L21/8234; H01L27/088; H01L29/78
Domestic Patent References:
| JP2005167251A | 2005-06-23 |
Foreign References:
| US6657244B1 | 2003-12-02 |
Attorney, Agent or Firm:
Masahiro Ishino
Kazuhisa Inaba
Kazuhisa Inaba
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