To provide a method for forming a thin film pattern not allowing generation of a fault in a product manufactured when a thin film pattern is formed with a lift-off method.
In the thin film pattern forming method, a resist film R formed on a substrate P is exposed through an exposure mask M1 including an aperture M1a for a thin film pattern corresponding to the thin film pattern to be formed, and an aperture M1b for a dummy pattern where lengths L1, L2 of a side are set in the size equal to or less than 1/2 the thickness of the resist film R. After the exposure step, thin films F1, F2 are formed on the substrate P and the resist film R, with the vacuum deposition method or sputtering method using a material f to form the thin film pattern. Thereafter, the resist film R is dissolved with a resist stripping liquid r, and thereby the resist film R may be removed from the area on the substrate P.
COPYRIGHT: (C)2007,JPO&INPIT
