Title:
METHOD FOR FORMING THIN FILM
Document Type and Number:
Japanese Patent JPH05279179
Kind Code:
A
Abstract:
PURPOSE:To improve the crystallinity and purity of the thin film by irradiating a substrate with the ion beans of a specific intermediate reaction product produced by an ionization treatment. CONSTITUTION:A substrate 2 set in an evacuated film-forming chamber 3 is heated. The gaseous compound containing the constituting element M of the thin film is charged in an ion source 4 from a gas bomb 5 to generate a plasma comprising the produced ions. One or several kinds of the intermediate reaction products containing a constituting element M are produced by the ionization treatment. The ions of the intermediate reaction products are guided into an ion line 6 through a mass spectrometer 1 to produce ion beams, which are irradiated on a substrate 2 to form a thin film on the substrate 2 by the chemical reactions of the ion beams.
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Inventors:
Kenya Sano
Minoru Obata
Takashi Kawakubo
Minoru Obata
Takashi Kawakubo
Application Number:
JP10390792A
Publication Date:
October 26, 1993
Filing Date:
March 31, 1992
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
C01B13/14; C01B21/072; C01B33/02; C23C16/48; C30B25/02; H01L21/203; (IPC1-7): C30B25/02; C01B21/072; C01B33/02; C23C16/48; H01L21/203
Attorney, Agent or Firm:
Noriyuki Noriyuki