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Title:
METHOD OF FRACTURING SEMICONDUCTOR SUBSTRATE, METHOD OF FRACTURING SOLAR CELL, AND THE SOLAR CELL
Document Type and Number:
Japanese Patent JP2008235521
Kind Code:
A
Abstract:

To provide a method of fracturing a semiconductor substrate, in which a uniform force is applied to all the fracturing grooves in fracturing the semiconductor substrate, and to provide a method of fracturing a solar cell and the solar cell.

In the method of fracturing a substrate, the dividing grooves 8 are formed so as not to become parallel to the cleavage planes of the semiconductor substrate 1, and the semiconductor substrate 1 is bent along the dividing grooves 8, thereby fracturing the semiconductor substrate 1 along the dividing grooves 8.


Inventors:
JINNO HIROYUKI
SHIMA MASAKI
Application Number:
JP2007072085A
Publication Date:
October 02, 2008
Filing Date:
March 20, 2007
Export Citation:
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Assignee:
SANYO ELECTRIC CO
International Classes:
H01L21/301; H01L31/04
Domestic Patent References:
JP2005167190A2005-06-23
JPS62105446A1987-05-15
JPS59152638A1984-08-31
JP2006310774A2006-11-09
JPS6268255U1987-04-28
JPH0794764A1995-04-07
JP2007042940A2007-02-15
JP2007026934A2007-02-01
JP2007044974A2007-02-22
Attorney, Agent or Firm:
Keishin Terayama
Hiroyuki Miyoshi
Ichitaro Ito



 
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