METHOD FOR GROWING NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR SUBSTRATE

Japanese Patent JP3589185

B2

PROBLEM TO BE SOLVED: To provide a method for growing a nitride semiconductor and a nitride semiconductor substrate in which crystal defect is suppressed as compared with prior art.
SOLUTION: The method for growing a nitride semiconductor comprises a step for growing a first nitride semiconductor layer on a substrate and forming a first protective film which exposes the nitride semiconductor layer periodically, a step for growing a second nitride semiconductor laterally on the first protective film using the exposed first nitride semiconductor as nuclei and joining it on the first protective film to form a second nitride semiconductor layer covering the first protective film, a step for forming a second protective film covering the junction of the second nitride semiconductor and the second nitride semiconductor layer grown laterally on the opposite sides thereof and opening the second nitride semiconductor layer above a first window part, a step for forming protrusions and recesses by etching the opened second nitride semiconductor layer, and a step for growing a third nitride semiconductor using the protrusions of second nitride semiconductor layer as nuclei.

Akira Yoneda
Hitoshi Maekawa
Takafumi Hirao

JP2001017002A

November 17, 2004

January 25, 2001

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Nichia Corporation

C23C16/34; H01L21/20; H01L21/205; H01L21/302; H01L21/3065; H01S5/323; H01S5/343; (IPC1-7): H01L21/20; H01L21/205

JP2001168028A
JP2001176805A
JP2000164989A
JP2000058454A
JP11274082A
JP2003514392A
JP2002518826A
JP2002009004A
JP2001156002A
JP2001111174A
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JP2000232239A

Yasuhiro Toyosu
Hisao Ishii

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