Title:
METHOD FOR LIQUID PHASE EPITAXIAL GROWTH
Document Type and Number:
Japanese Patent JPH05279178
Kind Code:
A
Abstract:
PURPOSE:To improve the optical characteristics and thickness uniformity of a single crystal thin film by canceling a forced convection produced by the rotation of a substrate on the growth of the single crystal by a natural convection produced in the melt to apparently convert the melt into a static state. CONSTITUTION:A raw material received in a crucible is melted in a liquid phase epitaxial device to form a melt. A substrate for a single crystal is immersed in the melt and rotated at a rotation rate of 10-40rpm, and simultaneously the lower part of the melt is heated to a temperature 50-90 deg.C higher than that of its upper part to generate a natural convection, whereby the forced convection produced by the rotation of the substrate is canceled by the natural convection to apparently convert the melt into a static state, and under the condition in the which the single crystal thin film of the raw material is formed on the substrate by the liquid phase epitaxial growth.
Inventors:
Satoshi Ohno
Masahiro Tsuji
Masahiro Tsuji
Application Number:
JP10934292A
Publication Date:
October 26, 1993
Filing Date:
April 01, 1992
Export Citation:
Assignee:
IBIDEN CO.,LTD.
International Classes:
C30B19/10; C30B29/28; C30B29/30; (IPC1-7): C30B19/10; C30B29/28; C30B29/30