Title:
METHOD FOR MACHINING SILICONE SUBSTRATE WITH LASER BEAM
Document Type and Number:
Japanese Patent JP3761788
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method which prevents a scatter of molten silicone which is generated in the machining of a silicone substrate with the irradiation of a laser beam.
SOLUTION: A drilling is performed after a reforming process is applied by making the silicone substrate irradiated with the laser beam of which the energy density on the machined surface is 6,500 to 55,000 J/m2 in the region to be machined of the surface of the silicone substrate when the silicone substrate which composes a semiconductor device is drilled by being irradiated with the laser beam of pulse oscillation.
Inventors:
Ryuta Araki
Teruyo Imai
Honda Shinichi
Teruyo Imai
Honda Shinichi
Application Number:
JP2001038845A
Publication Date:
March 29, 2006
Filing Date:
February 15, 2001
Export Citation:
Assignee:
Sumitomo Precision Products Co., Ltd.
International Classes:
B23K26/00; B23K26/382; B23K26/60; B23K26/70; B81C99/00; G01C19/56; G01C19/5684; H01L21/302; B23K101/40; (IPC1-7): B23K26/00; H01L21/302; //B23K101:40
Domestic Patent References:
| JP11083498A | ||||
| JP8146029A | ||||
| JP4324706A | ||||
| JP11251854A |
Attorney, Agent or Firm:
Chihara
Michio Mori
Terutada Hogami
Michio Mori
Terutada Hogami
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