Title:
METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR, METHOD OF MANUFACTURING DISPLAY DEVICE, METHOD OF MANUFACTURING X-RAY IMAGING DEVICE, AND METHOD OF MANUFACTURING OPTICAL SENSOR
Document Type and Number:
Japanese Patent JP2011146525
Kind Code:
A
Abstract:
To improve transistor characteristics while lowering a temperature of a heat treatment.
A field effect transistor is manufactured through a process of forming an active layer made of an amorphous oxide semiconductor containing In, Ga and Zn whose composition ratio is denoted by In:Ga:Zn=a:b:c, a, b, c satisfying relations of a+b=2, 1.2<b<2 and 1≤c≤2, and a process of heat-treating the active layer at ≤240°C.
Inventors:
HAMA IFUMI
TANAKA ATSUSHI
SUZUKI MASAYUKI
TANAKA ATSUSHI
SUZUKI MASAYUKI
Application Number:
JP2010006043A
Publication Date:
July 28, 2011
Filing Date:
January 14, 2010
Export Citation:
Assignee:
FUJIFILM CORP
International Classes:
H01L21/336; H01L29/786; H01L51/50
Domestic Patent References:
| JP2007281409A | 2007-10-25 | |||
| JP2009099847A | 2009-05-07 | |||
| JP2009099953A | 2009-05-07 | |||
| JP2009094465A | 2009-04-30 |
Foreign References:
| WO2010001783A1 | 2010-01-07 | |||
| WO2009084537A1 | 2009-07-09 |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Hiroshi Fukuda
Kato Kazunori
Hiroshi Fukuda