Title:
METHOD OF MANUFACTURING HOLLOW STRUCTURE AND HOLLOW STRUCTURE
Document Type and Number:
Japanese Patent JP2019012961
Kind Code:
A
Abstract:
To provide a method for manufacturing a hollow structure and a hollow structure which can solve etching defects by suppressing a growth of deposits during etching of a sacrificial layer.SOLUTION: The method of manufacturing a hollow structure 100 includes steps of: forming a sacrificial layer 102 on a first film 101; forming a second film 103 on the sacrificial layer; forming an etching opening 104 penetrating through at least one of the first film and the second film and communicating with the sacrificial layer; and etching the sacrificial layer with a gas containing a fluorine-containing gas and hydrogen through the etching opening to form a hollow portion. A composition ratio of silicon to nitrogen in a first region 105 including a surface in contact with the sacrificial layer is greater than a composition ratio of silicon to nitrogen in a second region 106 that does not include the first region.SELECTED DRAWING: Figure 24
Inventors:
TSUNODA TAKAYUKI
MARUYAMA AYAKO
AKIYAMA TAKAHIRO
SETOMOTO YUTAKA
MARUYAMA AYAKO
AKIYAMA TAKAHIRO
SETOMOTO YUTAKA
Application Number:
JP2017129351A
Publication Date:
January 24, 2019
Filing Date:
June 30, 2017
Export Citation:
Assignee:
CANON KK
International Classes:
H04R31/00; A61B8/14; B81B3/00; B81C1/00; H01L21/302; H04R19/00
Attorney, Agent or Firm:
Takuma Abe
Sogo Kuroiwa
Sogo Kuroiwa