Title:
METHOD OF MANUFACTURING NITRIDE-BASED III GROUP COMPOUND SEMICONDUCTOR AND NITRIDE-BASED III GROUP COMPOUND SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3680751
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a nitride-based III group compound semiconductor in which through dislocation density is suppressed.
SOLUTION: A GaN layer 31 is etched to form islands in a spotty pattern, a stripe pattern, or a lattice pattern in such a way that the horizontal cross sectional area approaches zero as the cross section moves far from the substrate plane. A mask 4 capable of being etched is formed on the whole surface of the GaN layer 31, and the mask 4 is etched so as to expose only the top parts T of the islands of the GaN layer 31. By epitaxially growing a GaN layer 32 in vertical and horizontal directions by utilizing the top parts T, which are exposed from the mask 4, of the GaN layer 31 for the nuclei, propagation of through dislocations from the GaN layer 31 is remarkably suppressed.
Inventors:
Masayoshi Koike
Yuta
Toshio Hiramatsu
Seiji Nagai
Yuta
Toshio Hiramatsu
Seiji Nagai
Application Number:
JP2001100931A
Publication Date:
August 10, 2005
Filing Date:
March 30, 2001
Export Citation:
Assignee:
Toyoda Gosei Co., Ltd.
International Classes:
H01L21/205; H01L33/32; H01L33/34; H01L33/40; H01S5/323; H01S5/343; (IPC1-7): H01L21/205; H01L33/00; H01S5/323
Domestic Patent References:
| JP11126948A | ||||
| JP2001257166A |
Attorney, Agent or Firm:
Osamu Fujitani
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