To form a high carrier concentrated p-type layer on a nitride compound semiconductor without necessity of severe conditions.

The method for manufacturing the nitride compound semiconductor comprises the steps of ion implanting a group II and/or group IV p-type dopant and a nitrogen in a nitride compound semiconductor to form a p-type, thereby suppressing occurrence of pores of the nitrogen, and thereby obtaining the p-type layer of a high carrier concentration without necessity of heating the nitride compound semiconductor at the time of ion implanting and heating after the ion implanting without high pressure-applying. As a result, the p-type can be formed without bringing about the severe conditions to the nitride compound semiconductor, and the high carrier concentration can be performed.