Title:
METHOD FOR MANUFACTURING PHASE SHIFT MASK AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
Document Type and Number:
Japanese Patent JP2010002853
Kind Code:
A
Abstract:
To obtain a high-quality phase shift mask with high reliability, suppressing generation of haze on the surface without degrading control of pattern dimensions and a phase difference with higher accuracy.
When a phase shifter layer 2 is processed by using a light-shielding film 3 as a hard mask, a mixture gas of SF6 and He is used as a first gas for an etching gas in a step S41, so as to subject the phase shifter layer 2 to dry etching; and in a step S42, a mixture gas of CF4 and He is used as a second gas for an etching gas to subject a S layer 1a to dry etching to remove the layer.
Inventors:
IIDA HITOSHI
ISHIWATARI NAOYUKI
HIRUMI JUNJI
IBARAKI TOSHIAKI
ISHIWATARI NAOYUKI
HIRUMI JUNJI
IBARAKI TOSHIAKI
Application Number:
JP2008163554A
Publication Date:
January 07, 2010
Filing Date:
June 23, 2008
Export Citation:
Assignee:
FUJITSU MICROELECTRONICS LTD
International Classes:
G03F1/30; G03F1/32; G03F1/68; G03F1/80; H01L21/027
Attorney, Agent or Firm:
Takayoshi Kokubun