METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Japanese Patent JP2009065172

A

To provide a method of manufacturing a semiconductor device which forms a non-single crystal Si thin film device and a single crystal Si thin film device and integrates a high performance system.

In the method of manufacturing a semiconductor device 20 in which a single crystal Si thin film transistor 16a and a non-single crystal Si thin film transistor 1a are formed on an insulating substrate 2, an oxide film, a gate pattern and an impurity ion implanted portion are formed on the front surface and then the surface is planarized, a single crystal Si substrate 10a having a portion 15 where hydrogen ions of predetermined concentration are implanted up to a predetermined depth is bonded onto the insulating substrate 2 by heat treatment, and an amorphous Si thin film 5 is formed after cleavage is performed at the hydrogen ion implanted portion 15 by heat treatment.

TAKATO YUTAKA
ITOGA TAKASHI

JP2008241411A

March 26, 2009

September 19, 2008

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SHARP KK

H01L21/02; H01L21/331; H01L21/336; H01L21/76; H01L21/762; H01L21/8222; H01L21/8234; H01L21/8248; H01L21/8249; H01L27/06; H01L27/08; H01L27/088; H01L27/12; H01L29/73; H01L29/786

JPH04362924A	1992-12-15
JPH05267563A	1993-10-15
JPH1124106A	1999-01-29
JPH10293322A	1998-11-04
JP2002229473A	2002-08-14
JPH06222391A	1994-08-12
JP2001028354A	2001-01-30
JPH10223495A	1998-08-21

ASPAR B., ET AL.: ""Transfer of structured and patterned thin silicon films using the Smart-Cut(R) process"", ELECTRONICS LETTERS, vol. 32, no. 21, JPN6008016807, 10 October 1996 (1996-10-10), pages 1985 - 1986, XP000683530, ISSN: 0002184806, DOI: 10.1049/el:19961305

Kenzo Hara International Patent Office

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