To provide a film forming method using a CVD device reducing an amount of subproducts such as SiO2 and Si3N4 stuck to an inner wall and an electrode of a CVD chamber, shortening cleaning time and reducing a discharge amount of gas with a high global warming coefficient.
The film forming method uses the CVD device 10 having an RF electrode 20 and a counter electrode stage 18 on which a substrate is placed. The device is provided with: an infrared-absorbing analyzer (FTIR) 50 which is disposed in a gas discharge route and analyzes an exhaust gas component, and a film forming condition controller 70. A temperature of the counter electrode stage 18 and a film forming condition being an electrode interval between the RF electrode 20 and the counter electrode stage 18 are changed so as to form a film. A cleaning gas is introduced, and the exhaust gas component is monitored with the infrared absorbing analyzer 50. Exhaust amounts are compared until the prescribed exhaust gas component becomes not more than prescribed concentration. The optimum condition of the film forming condition is obtained, and the film is formed with the optimum condition.
SAKAI KATSUO
OKURA SEIJI
SAKAMURA SHOJI
ABE KAORU
MURATA HITOSHI
KAMEDA KENJI
| JPH11204436A | 1999-07-30 | |||
| JPH07288248A | 1995-10-31 | |||
| JPH08176828A | 1996-07-09 | |||
| JPH01113332U | 1989-07-31 | |||
| JP2002158181A | 2002-05-31 | |||
| JPH1072672A | 1998-03-17 | |||
| JP2002517740A | 2002-06-18 |
Koji Makimura
Chihata Takahata