Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2011044555
Kind Code:
A
Abstract:
To suppress deterioration in ferroelectric capacitor in a manufacturing step.
A method of manufacturing a semiconductor device includes: forming a capacitor layer having a ferroelectric 120 containing Pb above a semiconductor substrate 100; forming a capacitor having the ferroelectric by processing the capacitor layer by RIE; and heat-treating the capacitor in an atmosphere including the Pb, oxygen, and lead single-substance oxide. Partial pressure of the lead single-substance oxide in the atmosphere during the heat treatment is higher than vapor pressure of the lead single-substance oxide produced with the Pb in the ferroelectric and is lower than vapor pressure of the lead single-substance oxide in the atmosphere.
Inventors:
NATORI KATSUAKI
YAMAKAWA KOJI
YAMAKAWA KOJI
Application Number:
JP2009191260A
Publication Date:
March 03, 2011
Filing Date:
August 20, 2009
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L27/105; H01L21/8246
Attorney, Agent or Firm:
Kurata Masatoshi
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Tetsuya Kazama
Katsumura Hiro
Shoji Kawai
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takuzo Ichihara
Yamashita Gen
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Tetsuya Kazama
Katsumura Hiro
Shoji Kawai
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takuzo Ichihara
Yamashita Gen