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Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2012248754
Kind Code:
A
Abstract:

To provide a method of manufacturing a semiconductor device that prevents crystal defects from occurring in a substrate on which semiconductor chips are mounted and reduces the manufacturing time.

A method of manufacturing a semiconductor device 101 comprises the steps of: forming a first insulating film 14 on a substrate (for example, a first semiconductor chip 10); forming an opening 14B on the first insulating film 14; mounting a second semiconductor chip 12 inside the opening of the first insulating film 14; forming a second insulating film 16 so as to straddle the second semiconductor chip 12 and the first insulating film 14; and then forming a wiring structure 26 on the second insulating film 16.


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Inventors:
SAITO HIROKAZU
Application Number:
JP2011120759A
Publication Date:
December 13, 2012
Filing Date:
May 30, 2011
Export Citation:
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Assignee:
LAPIS SEMICONDUCTOR CO LTD
International Classes:
H01L25/065; H01L23/12; H01L25/07; H01L25/18
Domestic Patent References:
JP2004165194A2004-06-10
JP2002016173A2002-01-18
JP2003301293A2003-10-24
JP2004186497A2004-07-02
JP2001257310A2001-09-21
Foreign References:
US20100216280A12010-08-26
US20100029047A12010-02-04
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Hiroshi Fukuda



 
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