Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2015008234
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of reducing the cost of manufacture and improving a yield.SOLUTION: When a ptype region 2 and an ntype region 3 are formed on the same principal surface of an nsemiconductor wafer 1, firstly, the ptype region 2 is formed on the whole of the rear face of the nsemiconductor wafer 1 by first ion implantation. Next, a resist mask 22 selectively covering the rear face of the nsemiconductor wafer 1 is formed. Next, second ion implantation 23 of an n type impurity is performed on the rear face of the nsemiconductor wafer 1 by using the resist mask 22 as a mask to form the ntype region 3 at a part deeper than the ptype region 2 from the rear face of the nsemiconductor wafer 1. Next, the nsemiconductor wafer 1 is exposed to an oxygen (O) gas atmosphere to which a fluorine (F) gas is added to remove the resist mask 22, and to remove a silicon part provided between the rear face of the nsemiconductor wafer 1 in an FWD region 13 not covered with the resist mask 22, and the ntype region 3.
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Inventors:
KAMEI TOSHIHITO
NOGUCHI SEISHI
NOGUCHI SEISHI
Application Number:
JP2013133210A
Publication Date:
January 15, 2015
Filing Date:
June 25, 2013
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L21/336; H01L21/265; H01L27/04; H01L29/739; H01L29/78
Domestic Patent References:
| JP2002343969A | 2002-11-29 | |||
| JP2011507300A | 2011-03-03 |
Foreign References:
| WO2013069113A1 | 2013-05-16 |
Attorney, Agent or Firm:
Akinori Sakai
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