Title:
METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2015088701
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element that prevents a reduction in yield while reducing damage to the inside of a semiconductor film such as an active layer.SOLUTION: A method of manufacturing a semiconductor element includes the steps of: growing, on a growth substrate 11, a semiconductor film 15 including an active layer 13; bonding a support substrate 16 on the semiconductor film 15; and removing the growth substrate 11 by irradiating a predetermined growth region at the interface between the semiconductor film 15 and the growth substrate 11 with laser light LB from a direction parallel to the semiconductor film 15.
Inventors:
KUMAGAI MITSUYASU
Application Number:
JP2013228507A
Publication Date:
May 07, 2015
Filing Date:
November 01, 2013
Export Citation:
Assignee:
STANLEY ELECTRIC CO LTD
International Classes:
H01L33/22; H01L33/32
Attorney, Agent or Firm:
Patent Business Corporation Lexto International Patent Office