To facilitate the realization of an octagonal diaphragm when a compact diaphragm is formed in a method of manufacturing a diaphragm type semiconductor pressure sensor through the use of a single crystal silicon substrate having a surface (110) as a main surface.
In the method of manufacturing the semiconductor pressure sensor, by arranging an etching mask 50 on the side of one surface 11 of the single crystal silicon substrate 10 in which the surface orientation of the one surface 11 is of the surface (110) and then performing anisotropic etching, a recession part 20 is formed, and the diaphragm 30 is formed on the side of a bottom surface of the recession part 20. The etching mask 50 used in the method comprises a cross-like opening part 51 in which a first region extended along the direction of a crystal axis [110] intersects a second region extended along the direction of a crystal axis [100], and, in the etching mask 50, the area of an opening part 51a of the region formed by overlapping between the first region and the second region in the opening part 51 is smaller than the area of the diaphragm 30.
| WO/1999/051991 | CLAMSHELL COVER ACCELEROMETER |
| JPH10185730 | PRESSURE SENSOR AND DIFFERENTIAL PRESSURE TRANSMITTER |
| WO/2004/034006 | PRESSURE SENSOR AND PRODUCTION THEREOF |
TOYODA INEO
Takahiro Miura
Fumihiro Mizuno