炭化珪素膜の製造方法 - Fine Ceramics Center

Title:

炭化珪素膜の製造方法

Document Type and Number:

Japanese Patent JP7292089

Kind Code:

B2

Abstract:

To provide a method for efficiently manufacturing a film consisting of silicon carbide crystal.SOLUTION: The first method for manufacturing a silicon carbide film comprises irradiating silicon carbide with a laser having an output of 250 W/cm2 or more to sublimate the silicon carbide and contacting a sublimate to a base material to deposit silicon carbide crystal on the surface of the base material. The second method for manufacturing a silicon carbide film comprises irradiating a raw material body 20 including metal silicon 11 and carbon 13 with a laser having an output of 250 W/cm2 or more, synthesizing silicon carbide, sublimating the silicon carbide and contacting a sublimate 18 to a base material 30 to deposit silicon carbide crystal on the surface of the base material 30.SELECTED DRAWING: Figure 4

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Inventors:

Satoshi Suehiro
Teiichi Kimura
Yao Yongzhao

Application Number:

JP2019081355A

Publication Date:

June 16, 2023

Filing Date:

April 22, 2019

Export Citation:

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Assignee:

Fine Ceramics Center

International Classes:

C30B29/36; C30B23/06

Domestic Patent References:

JP2003095796A
JP2009215116A

Attorney, Agent or Firm:

Kiyomichi Kojima
Yasuyuki Hiraiwa
Katsumasa Suzuki

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