Title:
炭化ケイ素多結晶基板の製造方法
Document Type and Number:
Japanese Patent JP7400337
Kind Code:
B2
Abstract:
To provide a manufacturing method of a silicon carbide polycrystalline substrate, for manufacturing a silicon carbide polycrystalline substrate having small warp, by suppressing generation of large warp on the silicon carbide polycrystalline substrate.SOLUTION: A manufacturing method of a silicon carbide polycrystalline substrate includes a first silicon carbide polycrystalline film deposition step for depositing a first silicon carbide polycrystalline film at the temperature of 1,400°C-1,500°C on a support substrate by a chemical vapor growth method, and a second silicon carbide polycrystalline film deposition step for depositing a second silicon carbide polycrystalline film on the first silicon carbide polycrystalline film, at the temperature of 1,200°C-1,300°C, namely, at a lower temperature by 100°C-200°C than a deposition temperature of the first silicon carbide polycrystalline film.SELECTED DRAWING: Figure 2
Inventors:
Taizo Kitagawa
Application Number:
JP2019192013A
Publication Date:
December 19, 2023
Filing Date:
October 21, 2019
Export Citation:
Assignee:
Sumitomo Metal Mining Co., Ltd.
International Classes:
C23C16/32; C30B25/18; C30B29/36
Domestic Patent References:
| JP5295546A | ||||
| JP2003034867A | ||||
| JP10167861A | ||||
| JP11292645A | ||||
| JP2012136376A |
Foreign References:
| WO2017047509A1 |
Attorney, Agent or Firm:
Fumio Takino
Toshiaki Tsuda
Yasuhiro Fukuda
Atsushi Watanabe
Toshiaki Tsuda
Yasuhiro Fukuda
Atsushi Watanabe