To securely prevent a void from occurring on a sticking interface of a wafer.

In a method of manufacturing an SOI substrate, a wafer 11 for active layer, which has an oxide film 11a formed on a surface, is stuck on a wafer 12 for support substrate to obtain a stuck wafer 13, and then the wafer 11 for active layer is ground to obtain the SOI substrate. One of the wafer 11 for active layer and the wafer 12 for support substrate is made of a silicon wafer having both surfaces polished, and the other of the wafer 11 for active layer and the wafer 12 for support substrate is made of a silicon wafer having one surface polished.