PURPOSE: To manufacture a compound semiconductor thin film capable of being deposited at a low temperature by a method wherein a chemical vapor depositing step in which at least either an organic metal quinuclidine addition or a metal hydride quinuclidine addition is contained in material gas is provided.

CONSTITUTION: An epitaxial substrate 4 is fixed onto a susceptor 3 made of carbon within a reaction pipe 2 constituting a reactor 1. The inside of the reaction pipe is made vacuum and a high frequency current is made to flow in a coil 5 and a temperature of the substrate 4 is raised by dielectric-heating and a surface of the substrate 4 is cleaned. Next, a substrate temperature is held a deposit temperature of GaAs and carrier gas is made to flow from a gas introduction pipe 6 into inside the reaction pipe 2 to vacuum-discharge to an exhaust port 7 to decompress. Next, a hydrogen-gas-diluted organic metal quinuclidine addition and(/or) a metal hydride quinuclidine addition are made to flow in from the gas introduction pipe 6 to form a metal thin film on a surface of the substrate 4. Thus, a thin film is deposited at a low temperature.