Title:
METHOD OF MANUFACTURING TRENCH TYPE METAL OXIDE FILM SEMICONDUCTOR FIELD EFFECT TRANSISTOR
Document Type and Number:
Japanese Patent JP2012033937
Kind Code:
A
Abstract:
To provide a method capable of manufacturing a trench type metal oxide film semiconductor field effect transistor (MOSFET) upward.
A trench bottom doping (TBD) process and/or a trench bottom oxide (TBO) process may be performed after forming a substrate and a first epitaxial (epi) layer. In order to improve the quality and purity of a second epi layer which is formed in a merged epitaxial lateral overgrowth (MELO) step, sealing by poly may be performed after formation of the TBO layer and before the MELO step. Plasma dry etching using an endpoint mode may be performed according to the position of the TBO layer in order to improve uniformity in the depth of the trench.
Inventors:
LU HAMILTON
LIPCSEI LASZLO
LIPCSEI LASZLO
Application Number:
JP2011168241A
Publication Date:
February 16, 2012
Filing Date:
August 01, 2011
Export Citation:
Assignee:
O2MICRO INC
International Classes:
H01L21/336; H01L21/20; H01L29/78
Domestic Patent References:
| JP2008060138A | 2008-03-13 | |||
| JP2008153389A | 2008-07-03 | |||
| JPH05198503A | 1993-08-06 | |||
| JPS6276716A | 1987-04-08 | |||
| JP2006156461A | 2006-06-15 | |||
| JP2004538648A | 2004-12-24 |
Foreign References:
| US6391699B1 | 2002-05-21 |
Attorney, Agent or Firm:
Yasuhiko Murayama
Masatake Shiga
Takashi Watanabe
Shinya Mitsuhiro
Masatake Shiga
Takashi Watanabe
Shinya Mitsuhiro