METHOD FOR MEASURING ELECTRON BEAM INCLINATION AND METHOD FOR CALIBRATING THE SAME IN ELECTRON BEAM PROXIMITY EXPOSURE SYSTEM, AND ELECTRON BEAM PROXIMITY EXPOSURE SYSTEM

Japanese Patent JP3714280

B2

PROBLEM TO BE SOLVED: To calibrate an electron beam to perform scanning with its attitude held in parallel with the optical axis in the electron beam scanning of a whole mask surface in an electron beam proximity exposure system.
SOLUTION: The inclination of an electron beam 15 is measured by using an electron beam inclination sensor 70 comprising a stencil mask 70A with a specified pattern formed thereon and an image sensor 70B positioned away from the stencil mask 70A by a specified distance. From the inclination thus measured, an inclination correcting value is determined for use in zeroing the inclination of the electron beam 15, and calibration is performed for the electron beam 15 to be in parallel with the optical axis irrespective of where the electron beam 15 scans.

JPS6319821	PATTERN FORMATION AND PATTERN TRANSCRIPTOR
JP2024515572	Methods and apparatus for depositing at least one layer, optical elements, and optical devices
WO/2002/069047	METHOD FOR EXPOSING AT LEAST ONE OR AT LEAST TWO SEMICONDUCTOR WAFERS

Akira Higuchi
Anazawa

JP2002139498A

November 09, 2005

May 15, 2002

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Leeple Co., Ltd.

G03F7/20; H01J37/147; H01J37/305; H01L21/027; (IPC1-7): H01L21/027; G03F7/20; H01J37/147; H01J37/305

JP2003077794A
JP2002043207A
JP64061914A
JP11067628A
JP10012178A
JP6235800A
JP6068831A
JP5166708A
JP3133039A

Kenzo Matsuura

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