PURPOSE: To improve the sensitivity of resist without varying other characteristics by a method wherein a predetermined light is absorbed by radicals while a radiation is applied and their electron conditions are excited to suppress recombination reaction.
CONSTITUTION: For instance, resist 3 is applied to a semiconductor substrate 4 to the thickness of less than 1 μm and prebaked and then exposed to X-rays through an X-ray mask 2. At the same time as the exposure to the X-rays, an ultraviolet radiation is applied to the surface of the sample for exposure and then a resist pattern is obtained by developing. With this constitution, the sensitivity of the resist can be improved without varying other characteristics by a relatively simple method wherein a light which decomposes radicals is applied during the exposure.
HAYATA YASUNARI
KIMURA TAKESHI
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