Title:
METHOD OF MEASURING FILM THICKNESS OF THIN FILM, METHOD OF FORMING POLYCRYSTAL SEMICONDUCTOR THIN FILM, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, MANUFACTURING APPARATUS FOR THE SAME, AND MANUFACTURE METHOD FOR IMAGE DISPLAY
Document Type and Number:
Japanese Patent JP2006300811
Kind Code:
A
Abstract:
To inspect film thicknesses of a thin film in ten-thousand or more of measurement points per minute ranging over the whole face of a substrate.
A laser beam is emitted toward the thin film 3 formed on the transparent substrate 2, transmission intensities are measured in a large number of same points within the substrate over the whole measuring area of the substrate, by a transmission beam intensity monitor 4, and reflected beam intensities are measured therein by a reflected beam intensity monitor 5. The film thickness is measured and evaluated from a relation between an A value and the film thickness, based on the value A=1-(R+T), where R is a reflectance and T is a transmittance.
Inventors:
TAKEDA KAZUO
GOTO JUN
MUTO DAISUKE
GOTO JUN
MUTO DAISUKE
Application Number:
JP2005124830A
Publication Date:
November 02, 2006
Filing Date:
April 22, 2005
Export Citation:
Assignee:
HITACHI DISPLAYS LTD
International Classes:
H01L21/20; G01B11/06; H01L21/268; H01L21/336; H01L29/786
Domestic Patent References:
| JPH07318321A | 1995-12-08 | |||
| JPS58162805A | 1983-09-27 | |||
| JPH0387605A | 1991-04-12 | |||
| JPH07103724A | 1995-04-18 | |||
| JPS5948605A | 1984-03-19 | |||
| JPH0335145A | 1991-02-15 | |||
| JPS62204104A | 1987-09-08 | |||
| JP2005011840A | 2005-01-13 |
Attorney, Agent or Firm:
Yoji Onodera