Title:
METHOD FOR POLISHING BOTH SIDES OF SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JP2004071833
Kind Code:
A
Abstract:
To provide a method for polishing both sides of a semiconductor wafer by which a wafer with high flatness can be obtained, the reduction of running cost be realized, and both front and rear sides thereof be quickly polished.
A polishing cloth 15 for front side and a polishing cloth 14 for backside wherein polishing particles are fixed on the respective polishing work surfaces are used to polish both sides in high flatness. Furthermore, running cost can be reduced, and both sides be also quickly polished. In addition, a KOH solution of pH 10.5-13 containing no polishing particles is used as a polishing liquid. Therefore, the polishing liquid can be easily handled, and a polishing waste liquid is easy to be reused.
Inventors:
HARADA SEISHI
NAGAI KIYOSATO
ONO ISOROKU
KIMOTO TSUTOMU
MIYAZAKI KAZUYA
NAGAI KIYOSATO
ONO ISOROKU
KIMOTO TSUTOMU
MIYAZAKI KAZUYA
Application Number:
JP2002229081A
Publication Date:
March 04, 2004
Filing Date:
August 06, 2002
Export Citation:
Assignee:
SUMITOMO MITSUBISHI SILICON
DISCO ABRASIVE SYSTEMS LTD
DISCO ABRASIVE SYSTEMS LTD
International Classes:
B24B7/17; H01L21/304; (IPC1-7): H01L21/304; B24B7/17
Attorney, Agent or Firm:
Ichiro Abe