AlN単結晶膜の作製方法

Title:

AlN単結晶膜の作製方法

Document Type and Number:

Japanese Patent JP4969860

Kind Code:

B2

More Like This:

JP6944569	Epitaxial substrates for semiconductor devices and semiconductor devices
JP4562398	Method for producing crystals of group III nitride
WO/2006/111804	SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

Inventors:

Kazumasa Hiramatsu
Hideto Miyake
Tomohiko Shibata
Shigeaki Sumiya

Application Number:

JP2006024940A

Publication Date:

July 04, 2012

Filing Date:

February 01, 2006

Export Citation:

Assignee:

Mie University
Nippon Insulator Co., Ltd.

International Classes:

C30B29/38; C23C16/34; C23C16/52; C30B25/16

Domestic Patent References:

JP2006290662A

Attorney, Agent or Firm:

Yoshitake Hidetoshi
Takahiro Arita

Previous Patent: JPS4969859

Next Patent: JPS4969861